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 MBR3045PT
Preferred Device
SWITCHMODEt Power Rectifier
These state-of-the-art devices use the Schottky Barrier principle with a platinum barrier metal.
Features http://onsemi.com
* Dual Diode Construction; Terminals 1 and 3 may be Connected for * * * *
Parallel Operation at Full Rating Guard-ring for Stress Protection Low Forward Voltage 175C Operating Junction Temperature Pb-Free Package is Available*
SCHOTTKY BARRIER RECTIFIER 30 AMPERES, 45 VOLTS
Mechanical Characteristics
1 3
2 4
* Case: Epoxy, Molded * Weight: 4.3 Grams (Approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * Lead Temperature for Soldering Purposes:
260C Max. for 10 Seconds
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 105C) Per Device Per Diode Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz) Per Diode Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Peak Repetitive Reverse Current (2.0 ms, 1.0 kHz) Per Diode (See Figure 6) Storage Temperature Range Operating Junction Temperature (Note 1) Peak Surge Junction Temperature (Forward Current Applied) Voltage Rate of Change (Rated VR) Symbol VRRM VRWM VR IF(AV) 30 15 IFRM 30 A Max 45 Unit V 1 2 A 3
Leads are Readily Solderable
MARKING DIAGRAM
4
SOT-93 CASE 340D PLASTIC
AYWWG MBR3045PT
IFSM
200
A
A Y WW G
= Assembly Location = Year = Work Week = Pb-Free Package
IRRM Tstg TJ TJ(pk) dv/dt
2.0 -65 to +175 -65 to +175 175 10,000
A C C C V/ms
ORDERING INFORMATION
Device MBR3045PT MBR3045PTG Package SOT-93 SOT-93 (Pb-Free) Shipping 30 Units / Rail 30 Units / Rail
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
(c) Semiconductor Components Industries, LLC, 2006
Preferred devices are recommended choices for future use and best overall value.
1
February, 2006 - Rev. 3
Publication Order Number: MBR3045PT/D
MBR3045PT
THERMAL CHARACTERISTICS (Per Diode)
Rating Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RqJC RqJA Max 1.4 40 Unit C/W C/W
ELECTRICAL CHARACTERISTICS (Per Diode)
Instantaneous Forward Voltage (Note 2) (iF = 20 Amps, TC = 125C) (iF = 30 Amps, TC = 125C) (iF = 30 Amps, TC = 25C) Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TC = 125C) (Rated dc Voltage, TC = 25C) 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. vF 0.60 0.72 0.76 iR 100 1.0 mA V
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
100 IR , REVERSE CURRENT (mA) 50 30 20 10 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 5.0 10 15 20 25 30 35 40 45 50 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) 100 TJ = 150C TJ = 150C 10 125C 100C 1.0 75C 25C
0.1 25C 0.01
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current
http://onsemi.com
2
MBR3045PT
PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS)
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
20 I I 15
20 I (CAPACITIVE LOAD) PK + 20, 10, 5 I
PK + p (RESISTIVE LOAD) AV
SQUARE WAVE
AV
SINE WAVE RESISTIVE LOAD SQUARE WAVE
15
10 dc 5.0 (CAPACITIVE LOAD) PK + 20, 10, 5 I 0 60 70 80 90 I
10 dc 5.0 TJ = 125C
AV
0 0 5.0 10 15 20 25 30 35 40 IF(AV), AVERAGE FORWARD CURRENT (AMPS)
100
110
120
130
140
150
160
TC, CASE TEMPERATURE (C)
Figure 3. Current Derating (Per Leg)
Figure 4. Forward Power Dissipation (Per Leg)
+150 V, 10 mAdc 3000 2000 C, CAPACITANCE (pF) 12 V 1000 900 800 700 600 500 400 300 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 VR, REVERSE VOLTAGE (VOLTS) 2.0 ms 1.0 kHz CURRENT AMPLITUDE ADJUST 0-10 AMPS 100 W CARBON 2N6277 100 2N2222 VCC 12 Vdc D.U.T. + 2.0 kW
4.0 mF
1.0 CARBON 1N5817
Figure 5. Capacitance
Figure 6. Test Circuit for Repetitive Reverse Current
http://onsemi.com
3
MBR3045PT
PACKAGE DIMENSIONS
SOT-93 (TO-218) PLASTIC CASE 340D-02 ISSUE E
B
Q E
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D E G H J K L Q S U V MILLIMETERS MIN MAX --- 20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF --- 16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX --- 0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF --- 0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069
U S K L
1 2
4
A
3
D V G J H
STYLE 1: PIN 1. 2. 3. 4.
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
http://onsemi.com
4
MBR3045PT/D


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